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40N03P - SSM40N03P
SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDSS R DS(ON) ID TO-220 30V 17mΩ 4.TS25P05G - (TS25P01G - TS25P07G) 25A Single-Phase Glass Passivated Bridge Rectifier
TS25P01G - 07G 25A Single-phase Glass-passivated Bridge Rectifier Voltage Range 50 to 1000 Volts FEATURES UL Recognized File # E-96005 Glass passivat.70T03GJ - SSM70T03GJ
SSM70T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM70T03 acheives fast switching performance w.P1000S - Standard silicon rectifier diode
P 1000 A....P 1000 S www.DataSheet4U.com 0, : ; 4 ; ; . +. 4 ; ; . ; ; , 26 7 $ 8 2: 7 $ 8 .40HFR120 - Standard Recovery Diodes
40HF(R) Series Vishay High Power Products Standard Recovery Diodes, (Stud Version), 40 A FEATURES • • • • High surge current capability Stud cathode .BY227G - (BY226G - BY228G) Standard silicon rectifier diodes
BY 226G, BY 227G, BY 228G *0 7 8 1 8 8 ) -) 1 8 8 ) 8 8 0 ,3 4 $ 5 ,7 4 $ 5 ,77 4 $ 5 .1N1199A - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .70L02H - SSM70L02H
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .SSM9435K - P-channel Enhancement-mode Power MOSFET
SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching Description D SOT-223 S D G Advanced Po.BY252 - Standard silicon rectifier diodes
BY 251...BY 255 Axial lead diode Standard silicon rectifier diodes BY 251...BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V Features .SSM90T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM90T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D .1N4595 - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 1000 V to 1400 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: St.MMBT3904LT1 - NPN Transistor
FEATURES Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junct.CP10C60 - Standard Gate Silicon Controlled Rectifiers
CP10C60 Standard Gate Silicon Controlled Rectifiers Symbol ○ 2. Anode ▼ ○ 3.Gate 1.Cathode ○ BVDRM = 600V IT(RMS) = 12 A ITSM = 120A Features ◆ Re.1N2131AR - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .1N2130AR - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .1N2129AR - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .1N2128AR - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .1N2130A - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .1N2129A - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .