Single-FET Datasheet | Specifications & PDF Download

Data Sheet Low Noise, Precision, Rail-to-Rail Output, JFET Single/Dual/Quad Op Amps ADA4610-1/ADA4610-2/ADA4610-4 FEATURES Low offset voltage B gra

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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TL071 Low noise JFET single operational amplifier Features ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset

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MDD1051 – Single N-Channel Trench MOSFET 150V MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced

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MDD1502 – Single N-Channel Trench MOSFET 30V MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mΩ General Description The MDD1502 uses advanced

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MDV1525 – Single N-Channel Trench MOSFET 30V MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Description The MDV1525 uses advanced M

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MDP10N055TH– Single N-Channel Trench MOSFET 100V MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5mΩ General Description Features The MDP10

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MDU1511 – Single N-Channel Trench MOSFET 30V ㅊ MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ General Description The MDU1511 uses advanc

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® LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . . . . . . . . . . . HIGH INPUT IMPEDAN

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Data Sheet FEATURES SC70 package Very low IB: 1 pA max Single-supply operation: 5 V to 26 V Dual-supply operation: ±2.5 V to ±13 V Rail-to-rail output

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MDP10N027TH– Single N-Channel Trench MOSFET 100V ` MDP10N027 Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ General Description Features The MDP

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100%

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MDD1902 – Single N-Channel Trench MOSFET 100V MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ General Description The MDD1902 uses advanced M

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MDU1721 – Single N-Channel Trench MOSFET 40V MDU1721 Single N-channel Trench MOSFET 40V, 100A, 1.4mΩ General Description The MDU1721 uses advanced M

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PD -97363 IRLB3034PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power S

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