* VDS = 100V ID = 11A @VGS = 10V RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Th
MDD1903
MagnaChip
196.23 KB
Single n-channel mosfet.
MDD1903
* Single N-Channel Trench MOSFET 100V
Preliminary
* Subject to change without notice
MDD1903
Single N-channel Trench MOSFET 1.
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