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MDD1903 Single N-channel MOSFET

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Description

MDD1903 * Single N-Channel Trench MOSFET 100V Preliminary * Subject to change without notice MDD1903 Single N-channel Trench MOSFET 1.
The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excell.

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Datasheet Specifications

Part number
MDD1903
Manufacturer
MagnaChip
File Size
196.23 KB
Datasheet
MDD1903-MagnaChip.pdf
Description
Single N-channel MOSFET

Features

*  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Th

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