MDD1901 - Single N-channel Trench MOSFET

MagnaChip

MDD1901 Datasheet Preview — Preview of MDD1901 PDF

Datasheet Details

Part number	MDD1901
Manufacturer	MagnaChip
File Size	826.72 KB
Description	Single N-channel Trench MOSFET
Datasheet	MDD1901-MagnaChip.pdf

MDD1901 Product details

Description

The MDD1901 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

 VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) G S TC=25oC TC=100oC TC=25oC TC=100oC Symbol VDSS.

📁 MDD1901 Similar Datasheet

MDD1051RH - N-Channel MOSFET (INCHANGE)
MDD1080-18N7 - Diode Modules (IXYS)
MDD1080-24N7 - Diode Modules (IXYS)
MDD1080-28N7 - Diode Modules (IXYS)
MDD110A - Ordinary rectifier module (KUNERJING)
MDD142-08N1 - Standard Rectifier (IXYS)
MDD142-12N1 - Standard Rectifier (IXYS)
MDD142-14N1 - Standard Rectifier (IXYS)

Other Datasheets by MagnaChip

MDD1902 - Single N-channel MOSFET
MDD1903 - Single N-channel MOSFET
MDD1903RH - Single N-channel MOSFET
MDD1904 - Single N-channel MOSFET
MDD1951 - N-Channel MOSFET
MDD1951RH - N-Channel MOSFET

Published: Apr 10, 2017 |