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UNISONIC TECHNOLOGIES CO., LTD LM317 LINEAR INTEGRATED CIRCUIT HIGH CURRENT 1.3V TO 37V ADJUSTABLE VOLTAGE REGULATOR 1 1 TO-220 TO-220F  DESC

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U T C LM317L LINEAR INTEGRATED CIRCUIT LOW CURRENT 1.25V TO 37V ADJUSTABLE VOLTAGE REGULATOR DESCRIPTION The UTC LM317L is a monolithic integrated cir

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HC-SR04 User Guide 1. Ultrasonic Distance Measurement Principles The transmitter emits a 8 bursts of an directional 40KHz ultrasonic wave when trigger

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インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS  　  のを  のをに  になを の, にえ, (フ の ) とを  　  ( ほか )  ACアダプタ  Ta = 25°C±3°C ドレイン VCC VDD フィード

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UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier a

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Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequenc

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www.DataSheet.co.kr Realizing the simplification of power Supply and downsizing IPD for switching power supply （MIP531) „ Overview MIP531 supporting

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AN7177 AN7177 Dual BTL 20W Audio Power Amplifier Unit : mm • Description The AN7177 is a monolithic integrated circuit designed for Dual BTL audio

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HC­SR04 Ultrasonic Sensor  Elijah J. Morgan  Nov. 16 2014      The purpose of this file is to explain how the HC­SR04 works. It will give a brief  exp

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( DataSheet : www.DataSheet4U.com ) Aluminum Electrolytic Capacitors/ S Surface Mount Type Series: S Type : V n Features Endurance: 85°C 2000 h 5.4

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ICs for Audio Common Use AN7164 30 W BTL audio power amplifier s Overview The AN7164 is an integrated circuit designed for 30 W (VCC = 21 V, 8 Ω) out

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Global LCD Panel Exchange Center www.panelook.com DESCRIPTION The following specifications are applied to the following IPS-Pro-TFT LCD module. Pro

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High efficiency, reduced dimension and space for power circuits of household appliances Power Units with Built-in Non-insulated Power Supply IPD MIP9E

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www.DataSheet4U.com (IPD) MIP289 MOS I • • , • IPD • 150 µA , , , IPD 1 2 3 4 6.3±0.2 Unit : mm +0 0.25 –0.05 MOSFET CMOS , 9.4±0.3 8 7 5 .10

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