SLIMDIP-L (Mitsubishi) - DIPIPM RC-IGBT inverter bridge
< DIPIPM >
SLIMDIP-L
TRANSFER MOLDING TYPE
INSULATED TYPE
OUTLINE
MAIN FUNCTION AND RATINGS RC-IGBT inverter bridge for three phase DC-to-AC power
(152 views)
SLIMDIP-S (Mitsubishi) - DIPIPM RC-IGBT inverter bridge
< DIPIPM >
SLIMDIP-S
TRANSFER MOLDING TYPE
INSULATED TYPE
OUTLINE
MAIN FUNCTION AND RATINGS RC-IGBT inverter bridge for three phase DC-to-AC power
(133 views)
M51953B (Mitsubishi) - VOLTAGE DETECTING/ SYSTEM RESETTING IC
(66 views)
M5216 (Mitsubishi) - DUAL LARGE-CURRENT OPERATIONAL AMPLIFIERS
MITSUBISHI LINEAR ICs
MS216
DUAL LARGE·CURRENT OPERATIONAL AMPLIFIERS (DUAL POWER SUPPLY TYPE)
DESCRIPTION
The M5216 is a semiconductor integrated ci
(60 views)
M5229P (Mitsubishi Electric) - Hi-Hi 7-Element Graphic Equalizer
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M5227P (Mitsubishi Electric Semiconductor) - Hi-Fi 5 Element Graphic Equalizer IC
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(52 views)
PS219A4-ASTX (Mitsubishi) - Dual-In-Line Package Intelligent Power Module
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AM27SGC03 (Kingbright Corporation) - SUBMINIATURE SOLID STATE LAMP
(49 views)
ACT7006 (Aeroflex Circuit Technology) - ACT7005/7006 Single Package Solution Dual Transceiver/ Protocol/ Subsystem
(48 views)
M5218AL (Mitsubishi) - DUAL LOW-NOISE OPERATIONAL AMPLIFIERS
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EIAJ Package Code SOP8-P-225-1.27 JEDEC Code – Weight(g) 0.07 Lead Material Cu Alloy
Plastic 8pin 225mil SOP
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BCR8PM (Mitsubishi Electric Semiconductor) - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8PM
OUTLINE DRAWING
10.5 MAX 5.2
Dimensions in
(47 views)
HK19F-DC12V (EVER-WAY INDUSTRY) - SUBMINIATURE DIP RELAY
HK 19F
SUBMINIATURE DIP RELAY
Features
● 2 Form C configuration ● High switching capacity: 125VA/60W ● Bifurcated contacts ● Epoxy sealed for automat
(46 views)
M38B40M8H-XXXXFP (Mitsubishi) - SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
(44 views)
RD15HVF1 (Mitsubishi Electric Semiconductor) - Silicon MOSFET Power Transistor
< Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W
DESCRIPTION
RD15HVF1 is a MOS FET type
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M62427FP (Mitsubishi) - SOUND PROCESSOR ICS
(43 views)
MC931 (Mitsubishi) - SWITCHING DIODE
MITSUBISHI SWITCHING DIODE
MC931
HIGH-SPEED SWITCHING/SILICON EPITAXIAL TYPE (SERIES TYPE)
DESCRIPTION
The MC931 is a silicon epitaxial double diode
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MI308 (Mitsubishi Electric) - PIN Diode RF Power Switching
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HK4100F-DC3V (HUI KE) - SUBMINIATURE SIGNAL RELAY
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HK 4100F/4101F
SUBMINIATURE SIGNAL RELAY
Features
● 3A switching capability ● 1 Form C ,B&Aconfiguration ● Standard PCB layout ● Plastic sealed an
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CM800E2Z-66H (Mitsubishi Electric Semiconductor) - IGBT Module
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MITSUBISHI HVIGBT MODULES
CM800E2Z-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transist
(41 views)
FU-68SDF-V810M197B (Mitsubishi Electric Semiconductor) - DFB-LD MODULE
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