Datasheet4U Logo Datasheet4U.com

RA30H1317M Datasheet - Mitsubishi Electric Semiconductor

RF MOSFET MODULE

RA30H1317M General Description

The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA30H1317M Datasheet (90.86 KB)

Preview of RA30H1317M PDF

Datasheet Details

Part number:

RA30H1317M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

90.86 KB

Description:

Rf mosfet module.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF MOSFET MODULE RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Am.

📁 Related Datasheet

RA30H1317M1 Silicon RF Power Modules (Mitsubishi)

RA30H1721M RoHS Compliance (Mitsubishi Electric)

RA30H0608M 30-watt RF MOSFET Amplifier Module (Mitsubishi Electric Semiconductor)

RA30H2127M 210-270MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)

RA30H3340M Silicon RF Power Modules (Mitsubishi Electric)

RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)

RA30H4452M 30-watt RF MOSFET Amplifier Module (Mitsubishi Electric Semiconductor)

RA30H4452M1A Silicon RF Power Modules (Mitsubishi)

RA30421051 (RA3xxxx) Reed Relays (HAMLIN)

RA30421121 (RA3xxxx) Reed Relays (HAMLIN)

TAGS

RA30H1317M MOSFET MODULE Mitsubishi Electric Semiconductor

Image Gallery

RA30H1317M Datasheet Preview Page 2 RA30H1317M Datasheet Preview Page 3

RA30H1317M Distributor