RA30H2127M Datasheet, Radio, Mitsubishi Electric Semiconductor

RA30H2127M Features

• Radio
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 210-270MHz

PDF File Details

Part number:

RA30H2127M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

61.54kb

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📄 Datasheet

Description:

210-270mhz 30w 12.5v mobile radio. The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 210- to 270-MHz range. The bat

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RA30H2127M

Mitsubishi Electric Semiconductor

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