* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) 1 4 5 TENTATIVE 1 3 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequen
RA30H0608M Datasheet (86.98 KB)
RA30H0608M
Mitsubishi Electric Semiconductor
86.98 KB
30-watt rf mosfet amplifier module.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 .
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