RA30H0608M Datasheet, Module, Mitsubishi Electric Semiconductor

RA30H0608M Features

• Module
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) 1 4 5 TENTATIVE 1 3 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF O

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Part number:

RA30H0608M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

86.98kb

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📄 Datasheet

Description:

30-watt rf mosfet amplifier module. The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The batte

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RA30H0608M

Mitsubishi Electric Semiconductor

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