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RA30H0608M

30-watt RF MOSFET Amplifier Module

RA30H0608M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) 1 4 5 TENTATIVE 1 3 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)

* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequen

RA30H0608M General Description

The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr.

RA30H0608M Datasheet (86.98 KB)

Preview of RA30H0608M PDF

Datasheet Details

Part number:

RA30H0608M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

86.98 KB

Description:

30-watt rf mosfet amplifier module.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 .

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RA30H0608M 30-watt MOSFET Amplifier Module Mitsubishi Electric Semiconductor

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