Datasheet4U Logo Datasheet4U.com

RA30H4452M Datasheet - Mitsubishi Electric Semiconductor

RA30H4452M 30-watt RF MOSFET Amplifier Module

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA30H4452M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 440-520MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* 66 x 21 x 9.8 mm

* Linear operation is poss

RA30H4452M_MitsubishiElectricSemiconductor.pdf

Preview of RA30H4452M PDF
RA30H4452M Datasheet Preview Page 2 RA30H4452M Datasheet Preview Page 3

Datasheet Details

Part number:

RA30H4452M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

63.19 KB

Description:

30-watt rf mosfet amplifier module.

RA30H4452M Distributor

📁 Related Datasheet

RA30H4452M1A Silicon RF Power Modules (Mitsubishi)

RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)

RA30H0608M 30-watt RF MOSFET Amplifier Module (Mitsubishi Electric Semiconductor)

RA30H1317M RF MOSFET MODULE (Mitsubishi Electric Semiconductor)

RA30H1317M1 Silicon RF Power Modules (Mitsubishi)

RA30H1721M RoHS Compliance (Mitsubishi Electric)

RA30H2127M 210-270MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)

RA30H3340M Silicon RF Power Modules (Mitsubishi Electric)

TAGS

RA30H4452M RA30H4452M 30-watt MOSFET Amplifier Module Mitsubishi Electric Semiconductor