RA30H4452M Datasheet - Mitsubishi Electric Semiconductor

30-watt RF MOSFET Amplifier Module

RA30H4452M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 440-520MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* 66 x 21 x 9.8 mm

* Linear operation is poss

RA30H4452M General Description

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA30H4452M Datasheet (63.19 KB)

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Datasheet Details

Part number:

RA30H4452M

Manufacturer:

Mitsubishi Electric Semiconductor

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63.19 KB

Description:

30-watt rf mosfet amplifier module.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM D.

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RA30H4452M 30-watt MOSFET Amplifier Module Mitsubishi Electric Semiconductor

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RA30H4452M Features

RA30H4452M General Description

Datasheet Details

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