RA30H4452M Datasheet, Module, Mitsubishi Electric Semiconductor

RA30H4452M Features

• Module
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
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Part number:

RA30H4452M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

63.19kb

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📄 Datasheet

Description:

30-watt rf mosfet amplifier module. The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The bat

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RA30H4452M

Mitsubishi Electric Semiconductor

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