Datasheet4U Logo Datasheet4U.com

RA30H3340M

Silicon RF Power Modules

RA30H3340M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 330-400MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V www.DataSheet4U.com

* 66 x 21 x 9.8 mm

* Line

RA30H3340M General Description

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA30H3340M Datasheet (198.70 KB)

Preview of RA30H3340M PDF

Datasheet Details

Part number:

RA30H3340M

Manufacturer:

Mitsubishi Electric

File Size:

198.70 KB

Description:

Silicon rf power modules.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM D.

📁 Related Datasheet

RA30H0608M - 30-watt RF MOSFET Amplifier Module (Mitsubishi Electric Semiconductor)
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 .

RA30H1317M - RF MOSFET MODULE (Mitsubishi Electric Semiconductor)
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF MOSFET MODULE RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Am.

RA30H1317M1 - Silicon RF Power Modules (Mitsubishi)
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp..

RA30H1721M - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1721M BLOCK DIAGRAM 2 3 RoHS Compliance , 175-215MHz 30.

RA30H2127M - 210-270MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H2127M 210-270MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 .

RA30H4047M - 400-470MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M BLOCK DIAGRAM MITSUBISHI RF MOSFET MODULE 400-470MHz 30W 12.5V MOBILE RADIO .

RA30H4452M - 30-watt RF MOSFET Amplifier Module (Mitsubishi Electric Semiconductor)
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM D.

RA30H4452M1A - Silicon RF Power Modules (Mitsubishi)
< Silicon RF Power Modules > RA30H4452M1A RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA30H4452M1A i.

TAGS

RA30H3340M Silicon Power Modules Mitsubishi Electric

Image Gallery

RA30H3340M Datasheet Preview Page 2 RA30H3340M Datasheet Preview Page 3

RA30H3340M Distributor