RA30H3340M Datasheet - Mitsubishi Electric

Silicon RF Power Modules

RA30H3340M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 330-400MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V www.DataSheet4U.com

* 66 x 21 x 9.8 mm

* Line

RA30H3340M General Description

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA30H3340M Datasheet (198.70 KB)

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Part number:

RA30H3340M

Manufacturer:

Mitsubishi Electric

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198.70 KB

Description:

Silicon rf power modules.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM D.

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RA30H3340M Features

RA30H3340M General Description

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