RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO

Mitsubishi Electric Semiconductor

Description

ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M BLOCK DIAGRAM MITSUBISHI RF MOSFET MODULE 400-470MHz 30W 12.5V MOBILE RADIO .
The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: RA30H4047M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 67.41 KB
Datasheet: RA30H4047M_MitsubishiElectricSemiconductor.pdf
Description: 400-470MHz 30W 12.5V MOBILE RADIO

Features

* Enhancemen- Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 400-470MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Module Size: 66 x 21 x 9.88 mm
* Linear ope

RA30H4047M Distributors

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RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor

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