RA30H4047M Datasheet - Mitsubishi Electric Semiconductor

400-470MHz 30W 12.5V MOBILE RADIO

RA30H4047M Features

* Enhancemen- Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 400-470MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Module Size: 66 x 21 x 9.88 mm

* Linear ope

RA30H4047M General Description

The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA30H4047M Datasheet (67.41 KB)

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Datasheet Details

Part number:

RA30H4047M

Manufacturer:

Mitsubishi Electric Semiconductor

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67.41 KB

Description:

400-470mhz 30w 12.5v mobile radio.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M BLOCK DIAGRAM MITSUBISHI RF MOSFET MODULE 400-470MHz 30W 12.5V MOBILE RADIO .

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RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor

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RA30H4047M Features

RA30H4047M General Description

Datasheet Details

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