RA30H4047M Datasheet, Radio, Mitsubishi Electric Semiconductor

RA30H4047M Features

• Radio
• Enhancemen- Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
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Part number:

RA30H4047M

Manufacturer:

Mitsubishi Electric Semiconductor

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67.41kb

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📄 Datasheet

Description:

400-470mhz 30w 12.5v mobile radio. The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The bat

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RA30H4047M

Mitsubishi Electric Semiconductor

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