RA30H4452M1A Datasheet - Mitsubishi

Silicon RF Power Modules

RA30H4452M1A Features

* Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V)

* Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW

* Broadband Frequency Range: 440-520MHz

* High speed Output rise/fall time. Ton

RA30H4452M1A General Description

The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate volta.

RA30H4452M1A Datasheet (1.10 MB)

RA30H4452M1A Datasheet Preview — Preview of RA30H4452M1A PDF

Datasheet Details

Part number:

RA30H4452M1A

Manufacturer:

Mitsubishi

File Size:

1.10 MB

Description:

Silicon rf power modules.

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RA30H4452M1A Silicon Power Modules Mitsubishi

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RA30H4452M1A Features

RA30H4452M1A General Description

Datasheet Details

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