RA30H4452M1A Datasheet, Modules, Mitsubishi

RA30H4452M1A Features

• Modules
• Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V)
• Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW
• Broadband Frequency Range: 440-520MH

PDF File Details

Part number:

RA30H4452M1A

Manufacturer:

Mitsubishi

File Size:

1.10MB

Download:

📄 Datasheet

Description:

Silicon rf power modules. The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-

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RA30H4452M1A

Mitsubishi

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