RA30H4452M1A Datasheet (Mitsubishi) - Silicon RF Power Modules

RA30H4452M1A, Silicon RF Power Modules

The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

The output power and drain current increase as the gate volta

RA30H4452M1A Features

* Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V)

* Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW

* Broadband Frequency Range: 440-520MHz

* High speed Output rise/fall time. Ton