RA30H1317M1 Datasheet - Mitsubishi

Silicon RF Power Modules

RA30H1317M1 Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

RA30H1317M1 General Description

The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. Wit.

RA30H1317M1 Datasheet (260.83 KB)

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Datasheet Details

Part number:

RA30H1317M1

Manufacturer:

Mitsubishi

File Size:

260.83 KB

Description:

silicon rf power modules.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp..

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RA30H1317M1 Silicon Power Modules Mitsubishi

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RA30H1317M1 Features

RA30H1317M1 General Description

Datasheet Details

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