T18 Datasheet | Specifications & PDF Download

AT1846S/AT1846SD SINGLE CHIP TRANSCEIVER FOR WALKIE TALKIE 1. General Description The AT1846S is a highly integrated single-chip transceiver for Wal

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GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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Synchronous DC-DC Boost Converter XT1861 ■ General Description XT1861 series is a high efficiency, low ripple , high frequency PFM control DC-DC boo

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http://www.ncepower.com Pb Free Product NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology tha

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MOS-TECH Semiconductor Co.,LTD N-Channel Enhancement Mode Field Effect Transistor MT1803 Features： VDS=30V ℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ

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PD F w C r e .n a t e n 8 c T om ce. ua ww ria l http://www.Datasheet4U.com InnoLux copyright All rights reserved, Copying forbidde n. Record of R

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Global LCD Panel Exchange Center www.panelook.com One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory www.

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NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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www.DataSheet4U.com Circuit Diagram for PF25T18/ PF29T18 (1) This circuit diagram is only for reference, specifications are subject to change withou

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® ST1803DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCHED PERFORMANCE s FULLY INSULATED PACKAGE FOR EASY www.DataSheet4U.co

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIE

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Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRO

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www.DataSheet4U.com OBSOLETE 2, 4 MEG x 72 NONBUFFERED DRAM DIMMs DRAM MODULE FEATURES • JEDEC-standard, eight-CAS#, ECC pinout in a 168-pin, dual

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NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM Features DDR SDRAM VLP Registered DIMM MT18VDVF6472D – 512MB MT18VDVF12872D – 1GB For the latest data shee

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1A, 1.5MHz Micropower Synchronous Boost Converter XT1801 ■ General Description The XT1801 is a synchronous, fixed frequency, step-up DC/DC converter

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+ – U U LT1803/LT1804/LT1805 Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps FEATURES s Slew Rate: 100V/µs s Gain Bandwidth

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LT1818/LT1819 400MHz, 2500V/µs, 9mA Single/Dual Operational Amplifiers FEATURES s s s s s s s s s s s s s s DESCRIPTIO 400MHz Gain Bandwidth Produc

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LT18XX-81 5.0MM ROUND LAMP (LONG LEADS) Features * LOW CURRENT REQUIREMENTS * HIGH LIGHT OUTPUT * RELIABLE AND RUGGED * IC COMPATIBLE Absolute Maxi

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