AS7C251MFT18A - 2.5V 1M x 18 flowthrough burst synchronous SRAM

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Alliance Semiconductor Corporation

Part number	AS7C251MFT18A
Manufacturer	Alliance Semiconductor Corporation
File Size	557.29 KB
Description	2.5V 1M x 18 flowthrough burst synchronous SRAM
Datasheet	AS7C251MFT18A Datasheet
Additional preview pages of the AS7C251MFT18A datasheet.

The AS7C251MFT18A is a high-performance CMOS 16-Mbit synchronous Static Random Access Memory (SRAM) device organized as 1,048,576 words x18 bits.

Fast cycle times of 8.5/10/12 ns with clock access times (tCD) of 7.5/8.5/10 ns.

Three chip enable (CE) inputs permit easy memory expansion.

Organization: 1,048,576 words x18 bits Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available 100-pin TQFP package.
Individual byte write and global write Multiple chip enables for easy expansion 2.5V core power supply Linear or interleaved burst control Snooze mode for reduced power-st.

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AS7C251MFT32A - (AS7C251MFT32A / AS7C251MFT36A) 2.5V 1M x 32/36 Flow-through synchronous SRAM
AS7C251MFT36A - (AS7C251MFT32A / AS7C251MFT36A) 2.5V 1M x 32/36 Flow-through synchronous SRAM
AS7C251MNTD18A - 2.5V 1M x 18 Pipelined SRAM
AS7C251MNTD32A - (AS7C251MNTD32A / AS7C251MNTD36A) 2.5V 1M x 32/36 Pipelined SRAM
AS7C251MNTD36A - (AS7C251MNTD32A / AS7C251MNTD36A) 2.5V 1M x 32/36 Pipelined SRAM
AS7C251MNTF18A - 2.5V 1M x 18 Flowthrough Synchronous SRAM

Published: Nov 17, 2008 |