AS7C251MFT18A
AS7C251MFT18A is 2.5V 1M x 18 flowthrough burst synchronous SRAM manufactured by Alliance Semiconductor Corporation.
Features
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- - Organization: 1,048,576 words x18 bits Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available 100-pin TQFP package
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- Individual byte write and global write Multiple chip enables for easy expansion 2.5V core power supply Linear or interleaved burst control Snooze mode for reduced power-standby
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Logic block diagram
CLK ADV ADSC ADSP A[19:0] CLK CS CLR
Burst logic 20 18 20
Q D CS Address
1M x 18 Memory array 18 18 register
GWE BWb BWE BWa CE0 CE1 CE2
D DQb
CLK D DQa Q
Byte Write registers
Byte Write registers
CLK D
CE CLK D ZZ
Enable register
Output buffers
Input registers
Power down
Enable delay register
CLK OE
DQ[a,b]
Selection guide
-75 Minimum cycle time Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby current (DC) 8.5 7.5 275 90 60 -85 10 8.5 250 80 60 -10 12 10 230 80 60 Units ns ns m A m A m A
12/24/04, v. 1.2
Alliance...