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AS7C251MNTD18A - 2.5V 1M x 18 Pipelined SRAM

General Description

The AS7C251MNTD18A family is a high performance CMOS 16-Mbit synchronous Static Random Access Memory (SRAM) organized as 1,048,576 words × 18 bits and incorporates a LATE LATE Write.

Key Features

  • Organization: 1,048,576 words × 18 bits.
  • NTD™architecture for efficient bus operation.
  • Fast clock speeds to 166 MHz.
  • Fast clock to data access: 3.5/3.8 ns.
  • Fast OE access time: 3.5/3.8 ns.
  • Fully synchronous operation.
  • Asynchronous output enable control.
  • Available in 100-pin TQFP package www. DataSheet4U. com.
  • Individual byte write and global write.
  • Clock enab.

📥 Download Datasheet

Datasheet Details

Part number AS7C251MNTD18A
Manufacturer Alliance Semiconductor Corporation
File Size 480.76 KB
Description 2.5V 1M x 18 Pipelined SRAM
Datasheet download datasheet AS7C251MNTD18A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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December 2004 ® AS7C251MNTD18A 2.5V 1M x 18 Pipelined SRAM with NTDTM Features • Organization: 1,048,576 words × 18 bits • NTD™architecture for efficient bus operation • Fast clock speeds to 166 MHz • Fast clock to data access: 3.5/3.8 ns • Fast OE access time: 3.5/3.8 ns • Fully synchronous operation • Asynchronous output enable control • Available in 100-pin TQFP package www.DataSheet4U.com • Individual byte write and global write • • • • • • Clock enable for operation hold Multiple chip enables for easy expansion 2.5V core power supply Self-timed write cycles Interleaved or linear burst modes Snooze mode for standby operation Logic block diagram A[19:0] 20 D Address register burst logic Q 20 CLK CE0 CE1 CE2 R/W BWa BWb ADV / LD LBO ZZ D Q 20 Write delay addr.