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TBC338

TBC338 DataSheet

Toshiba

TBC338 - Silicon NPN Transistor

· 4 Hits . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 M...
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