TBC338 Datasheet, Transistor, Toshiba

TBC338 Features

• Transistor . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i

PDF File Details

Part number:

TBC338

Manufacturer:

Toshiba ↗

File Size:

34.96kb

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📄 Datasheet

Description:

Silicon npn transistor.

TAGS

TBC338

Toshiba

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