Datasheet Summary
:
TBC337 TBC338
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP PLEMENTS ARE TBC327 AND TBC328.
Features
. High V C EO : 45V (TBC337)
25V (TBC338) . Low Saturation Voltage
: V CE ( sat )=0.7V
(Max.) at I C =500mA
Unit in mm
' r^
<
„H 4n o.4 5 z
55 MAX. a
|
00 r-
C.4 5 r-i
MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC337 TBC338
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
TBC337 TBC338
Collector Current
DC Peak
Base Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL V (BR)CBO v (BR)...