TBC338, TBC337 Silicon NPN Transistor

Toshiba

Description

: TBC337 TBC338 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS.PNP COMPLEMENTS.

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TBC338 Datasheet Preview — This datasheet PDF includes multiple part numbers: TBC338, TBC337. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TBC338, TBC337
Manufacturer: Toshiba ↗
File Size: 34.96 KB
Datasheet: TBC337-Toshiba.pdf
Description: Silicon NPN Transistor
Note: This datasheet PDF includes multiple part numbers: TBC338, TBC337.
Please refer to the document for exact specifications by model.

Features

* . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max. ) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC337 TBC338 Collector-Emitter Br

TBC338 Distributors

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TBC337 Silicon NPN Transistor Toshiba

Toshiba TBC338-like datasheet