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TBC338, TBC337 Datasheet - Toshiba

TBC338 Silicon NPN Transistor

TBC338 Features

* . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC337 TBC338 Collector-Emitter Br

TBC337-Toshiba.pdf

This datasheet PDF includes multiple part numbers: TBC338, TBC337. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

TBC338, TBC337

Manufacturer:

Toshiba ↗

File Size:

34.96 KB

Description:

Silicon npn transistor.

Note:

This datasheet PDF includes multiple part numbers: TBC338, TBC337.
Please refer to the document for exact specifications by model.

TBC338 Distributor

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TAGS

TBC338 TBC337 Silicon NPN Transistor Toshiba