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TBC338 Datasheet - Toshiba

TBC338 Silicon NPN Transistor

TBC338 Features

* . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC337 TBC338 Collector-Emitter Br

TBC338 Datasheet (34.96 KB)

Preview of TBC338 PDF

Datasheet Details

Part number:

TBC338

Manufacturer:

Toshiba ↗

File Size:

34.96 KB

Description:

Silicon npn transistor.

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TBC338 Silicon NPN Transistor Toshiba

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