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TBC338 - Silicon NPN Transistor

Download the TBC338 datasheet PDF. This datasheet also covers the TBC337 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max. ) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TBC337-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TBC338
Manufacturer Toshiba
File Size 34.96 KB
Description Silicon NPN Transistor
Datasheet download datasheet TBC338 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TBC337 Silicon NPN Transistor
TBC327 Silicon PNP Transistor
TBC328 Silicon PNP Transistor
TBC546 Silicon NPN Transistor
TBC547 Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
: TBC337 TBC338 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP COMPLEMENTS ARE TBC327 AND TBC328. FEATURES . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.
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