TBF Datasheet | Specifications & PDF Download

SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. . NPN Complemen

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. . PNP Complemen

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STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General feature

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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03/11/2004 RELIABILITY REPORT FOR DS21354, Rev B2 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel

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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. . NPN Complemen

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Silicon Bridge Rectifiers Production specification TBF20M Features  Glass passivated junction  High surge current capability  Saves space on prin

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CHA5390TBF 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The monolithic microwave IC (MMIC) in th

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. . PNP Complemen

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BRIGHT LED ELECTRONICS CORP. SINCE 1981 BL-B5134-FP5-TBF23A ● Features: 1. Chip material: GaP/GaP 2. Emitted color : Bright Red ● Package dimensio

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Silicon Bridge Rectifiers Production specification FTBF20K--FTBF20M Features  Glass passivated junction  High surge current capability  Saves spa

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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Silicon Bridge Rectifiers Production specification TBF10M Features  Glass passivated junction  High surge current capability  Saves space on prin

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING •

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www.DataSheet4U.com Hermetic; MIL-C-5015 BFH/TBFH T he BFH (Bulkhead Fitting) and TBFH (Thru-Bulkhead Fitting) are hermetically sealed versions of

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