TC3588 Datasheet | Specifications & PDF Download

CYStech Electronics Corp. Spec. No. : C102N6 Issued Date : 2015.08.13 Revised Date : Page No. : 1/12 N- And P-Channel Enhancement Mode Power MOSFET

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FEATURES nn 950nA Input Quiescent Current (Output in Regulation – No Load) nn 450nA Input Quiescent Current in UVLO nn 2.7V to 20V Input Operating Ran

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SHENZHEN FUMAN ELECTRONICS CO., LTD. TC3588 (：S&CIC0832) 、  ，；  ；  4.25V（） L1 ；  ；  ；  。 、 （DI1P-8） BTN 1 8 V CC L1 2 7 BTP L2 3 6 G

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FEATURES nn 1500nA Input Quiescent Current (Output in Regulation – No Load, VIN = 18V) nn 830nA Input Quiescent Current in UVLO, VIN = 12V nn 14V to 2

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TC358867XBG CMOS Digital Integrated Circuit Silicon Monolithic TC358867XBG Mobile Peripheral Devices Overview TC358867XBG TC358867XBG is a bridge

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TC358840XBG CMOS Digital Integrated Circuit Silicon Monolithic TC358840XBG Mobile Peripheral Devices Overview TC358840XBG, Ultra HD to CSI-2, bridge

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TC358860XBG CMOS Digital Integrated Circuit Silicon Monolithic TC358860XBG Mobile Peripheral Devices Overview TC358860XBG TC358860XBG converts an

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CYStech Electronics Corp. Spec. No. : C102G6 Issued Date : 2016.05.03 Revised Date : Page No. : 1/13 N- And P-Channel Enhancement Mode Power MOSFET

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TC358870XBG CMOS Digital Integrated Circuit Silicon Monolithic TC358870XBG Mobile Peripheral Devices TC358870XBG Overview TC358870XBG, Ultra HD to

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CYStech Electronics Corp. Spec. No. : C102DFA6 Issued Date : 2015.12.03 Revised Date : Page No. : 1/13 N- And P-Channel Enhancement Mode MOSFET MTC

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