MTC3588BDFA6 Datasheet - CYStech Electronics

MTC3588BDFA6 - P- & N-Channel Enhancement Mode Power MOSFET

The MTC3588BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2 *2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2 *2-6L package is universally pre.

MTC3588BDFA6 Features

* Simple drive requirement

* Pb-free lead plating and halogen-free package

* Low on-resistance

* Fast switching speed

* Low gate charge Equivalent Circuit MTC3588BDFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain

MTC3588BDFA6-CYStechElectronics.pdf