MTC3586BDFA6 - N- AND P-Channel Enhancement Mode MOSFET

Product Overview

Cystech Electonics

Datasheet Details

Part number	MTC3586BDFA6
Manufacturer	Cystech Electonics
File Size	423.86 KB
Description	N- AND P-Channel Enhancement Mode MOSFET
Datasheet	MTC3586BDFA6 Datasheet
Additional preview pages of the MTC3586BDFA6 datasheet.

Product details

Description

RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2 2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The DFN2 2-6L package is universally preferred for all commercial-industrial surface mount applications.

Features

Simple drive requirement.
Low gate charge.
Low on-resistance.
Fast switching speed.
Pb-free lead plating and halogen-free package Equivalent Circuit MTC3586BDFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain Ordering Information Device Package MTC3586BDFA6-0-T1-G DFN2×2-6L (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green com.

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Published: Feb 9, 2016 |