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MTC3586BDFA6 Datasheet - Cystech Electonics

MTC3586BDFA6 N- AND P-Channel Enhancement Mode MOSFET

RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2 *2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-res.

MTC3586BDFA6 Features

* Simple drive requirement

* Low gate charge

* Low on-resistance

* Fast switching speed

* Pb-free lead plating and halogen-free package Equivalent Circuit MTC3586BDFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain Ordering Information Device Package MTC3586

MTC3586BDFA6-CystechElectonics.pdf

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Datasheet Details

Part number:

MTC3586BDFA6

Manufacturer:

Cystech Electonics

File Size:

423.86 KB

Description:

N- and p-channel enhancement mode mosfet.

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MTC3586BDFA6 MTC3586BDFA6 AND P-Channel Enhancement Mode MOSFET Cystech Electonics

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