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MTC3586DFA6

P- & N-Channel Enhancement Mode Power MOSFET

MTC3586DFA6 Features

* Simple drive requirement

* Low gate charge

* Low on-resistance

* Fast switching speed

* Pb-free lead plating and halogen-free package Equivalent Circuit MTC3586DFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain Ordering Information Device Package MTC358

MTC3586DFA6 General Description

RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2
*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist.

MTC3586DFA6 Datasheet (371.95 KB)

Preview of MTC3586DFA6 PDF

Datasheet Details

Part number:

MTC3586DFA6

Manufacturer:

CYStech Electronics

File Size:

371.95 KB

Description:

P- & n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C835DFA6 Issued Date : 2013.06.03 Revised Date : 2013.10.30 Page No. : 1/13 N- AND P-Channel Enhancement Mode .

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TAGS

MTC3586DFA6 N-Channel Enhancement Mode Power MOSFET CYStech Electronics

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