TC3879 Datasheet | Specifications & PDF Download

Plastic-Encapsulate Transistors FEATURES • High power gain KTC3879 (NPN) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter

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Elektronische Bauelemente KTC3879 0.05A , 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f

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KTC3879 TRANSISTOR (NPN) FEATURES  High Power Gain APPLICATIONS  High Frequency Application  HF,VHF Band Amplifier Application MAXIMUM RATINGS (

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SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz) MAX

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FEATURES n Wide VIN Range: 4V to 38V n ±1% 0.6V Voltage Reference n Extremely Fast Transient Response n tON(MIN): 43ns n No RSENSE™ Valley Current Mod

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TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES 7W Typical Output Power 10.5dB Typical Linear Power Ga

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NPN Silicon Epitaxial Planar Transistor FEATURES z High power gain. Pb Lead-free APPLICATIONS z High frequency application. z HF,VHF band amplifier

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KTC3879S Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features 。 High Gpe. 

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