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TC3879

7W Packaged Single-Bias PHEMT GaAs Power FETs

TC3879 Features

* ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35% ! Breakdown Voltage: BVDGO ≥ 18V ! 100 % DC Tested ! Suitable for High Reliability Application PHOTO ENLARGEMENT DESCRIPTION The TC387

TC3879 General Description

The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of com.

TC3879 Datasheet (75.98 KB)

Preview of TC3879 PDF

Datasheet Details

Part number:

TC3879

Manufacturer:

Transcom

File Size:

75.98 KB

Description:

7w packaged single-bias phemt gaas power fets.

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TC3879 Packaged Single-Bias PHEMT GaAs Power FETs Transcom

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