TE45 Datasheet | Specifications & PDF Download

NTE451 Silicon N–Channel JFET Transistor VHF/UHF Amplifier Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . .

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NTE452 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Description: The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) i

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NTE457 Silicon N–Channel JFET Transistor General Purpose Amp, Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . .

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NTE456 N–Channel Silicon JFET General Purpose Amp, Switch Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 t

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NTE459 N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Source Vo

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NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VH

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NTE44 (NPN) & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C u

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Date:- 25 April, 2013 Data Sheet Issue:- A3 Phase Control Thyristor Types N2825T#400 and N2825T#450 Development Type No.: NX247T#400 and NX247T#450 A

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NTE458 N–Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier Features: D Very Low Noise D Low Gate Current Absolute Maximum Rat

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www.DataSheet4U.com NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor (MOSFET) Description: The NTE455 is an N−Channel silicon dual−gate

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 Product Introduction Microwave dielectric resonator material is the cornerstone of future communications technology. Features :  High Q Value.  E

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STE45NK80ZD N-CHANNEL 800V - 0.11Ω - 45 A ISOTOP Super FREDMesh™ MOSFET Table 1: General Features TYPE STE45NK80ZD s s s s s s Figure 1: Package ID 4

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