TG-29 Datasheet | Specifications & PDF Download

Micron Confidential and Proprietary 2Gb: x8 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAGAWP-IT:G, MT29F2G08ABAGAH4-IT:G, MT29F2G08ABBGA

Rating: 1 ★ (8 votes)

Micron Confidential and Proprietary 2Gb: x8 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAGAWP-IT:G, MT29F2G08ABAGAH4-IT:G, MT29F2G08ABBGA

Rating: 1 ★ (7 votes)

Micron Confidential and Proprietary 2Gb: x8 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAGAWP-IT:G, MT29F2G08ABAGAH4-IT:G, MT29F2G08ABBGA

Rating: 1 ★ (4 votes)

Applications  Test Instrumentation  Electronic Warfare (EW)  Radar  Communications TGA2963 6 – 18GHz 20W GaN Power Amplifier Product Features 

Rating: 1 ★ (4 votes)

TIGER ELECTRONIC CO.,LTD Etek Microelectronics ET62429 ET62429 。 z z 0～－83dB，－∞（） z VNO＝5µV，（ATT＝－∞，JIS－A） THD=0.01%，(V0 = 0.5V，DIN-AUDIO) z

Rating: 1 ★ (4 votes)

Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz and 32 V supply. The device is in an i

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TGA2958 13 – 18 GHz 2 W GaN Driver Amplifier Product Description Qorvo’s TGA2958 is a driver amplifier fabricated on Qorvo’s QGaN15 GaN on SiC proces

Rating: 1 ★ (4 votes)

IPTG029N13NM6 MOSFET OptiMOSTM 6 Power-Transistor, 135 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge

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Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance • • • • • • Production version of TGA9058 0.25um pHEMT Tech

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Advance Product Information 23 - 29 GHz High Power Amplifier TGA1088-EPU Key Features and Performance • • • • • • • • 0.25um pHEMT Technology 23 GH

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Product Datasheet 23 - 29 GHz High Power Amplifier TGA9070-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Fre

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Advance Product Information Feb 15, 2008 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • 2. 6 GHz Application Frequency Range • 12 dB Nom

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Product Data Sheet August 5, 2008 29-37 GHz Compact Driver Amplifier Key Features • • • • • TGA4510 0.25 um pHEMT Technology >16 dB Nominal Gain @

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TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key Features • Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: • TOI: 44 dBm • 31 dB

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TGV2529-SM 12.5 – 13.5 GHz VCO with Divide by 2 Applications  Point to Point Radio / VSAT  Millimeter-wave Communications  Test Equipment Product

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C FEATURES TIGER ELECTRONIC CO.,LTD 1N4728 THRU 1N4764 1W SILICON PLANAR ZENER DIODES . Silicon planar power zener diodes For use in stabilizing and

Rating: 1 ★ (3 votes)

TGA2963-CP 6 – 18 GHz 20 W GaN Power Amplifier Product Description Qorvo’s TGA2963-CP is a broadband high power MMIC amplifier fabricated on Qorvo’s

Rating: 1 ★ (3 votes)

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and sw

Rating: 1 ★ (3 votes)

HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

Rating: 1 ★ (2 votes)