HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DE.
EIC
TGL41-39A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 TGL41- 6.8 ~ TGL41-200CA VBR : 6.8 to 200 V PPPM : 400 W FEATURES : * Ideal for automated placement .
ETC
TG110-E139N5 - Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
L A N Extended Temperature Range, E-Ultra™ 10/100BASE-TX SOIC-16 Magnetic Modules HALO Electronics is pleased to offer the E-Ultra™, the industry’s f.
TGS
1N4739 - 1W SILICON PLANAR ZENER DIODES
C FEATURES TIGER ELECTRONIC CO.,LTD 1N4728 THRU 1N4764 1W SILICON PLANAR ZENER DIODES . Silicon planar power zener diodes For use in stabilizing and.
Vishay
TGL41-39A - Transient Voltage Suppressors
www.vishay.com TGL41-6.8A thru TGL41-200A Vishay General Semiconductor TRANSZorb® Transient Voltage Suppressors DO-213AB (GL41) FEATURES • Plastic.
EIC
TGL41-39 - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 TGL41- 6.8 ~ TGL41-200CA VBR : 6.8 to 200 V PPPM : 400 W FEATURES : * Ideal for automated placement .
Holtek Semiconductor Inc
HTG1390 - 4-bit Microcontroller
Preliminary Features • • • • • • • • HTG1390 4-bit Microcontroller • • • • • • • • Operating voltage: 1.2V~1.8V 7 input lines 3 output lines Halt fe.
Holtek Semiconductor Inc
HTG1395 - 3-in-1 LCD Game
HTG1395 3-in-1 LCD Game Features · · Operating voltage: 1.2V~1.5V 27 segment´3 common, 1/3 duty, 1/2 bias LCD driver · RC oscillator 400kHz Genera.
Clare Inc
TG-139 - HIGH ENERGY SPARK GAP DEVICES
HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require .
Clare Inc
TG-39 - HIGH ENERGY SPARK GAP DEVICES
HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require .
TriQuint Semiconductor
TGA8399B-EPU - 6-13 GHz Low Noise Amplifier
Advance Product Information 6-13 GHz Low Noise Amplifier Key Features and Performance • • • • • • • 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Freq.
TriQuint Semiconductor
TGA8399C-EPU - Wideband Driver Amplifier
Advance Product Information Wideband Driver Amplifier Key Features and Performance • • • • • • • Two Stage Driver Amplifier 0.25um pHEMT Technology 8.
TriQuint Semiconductor
TGC1439A - 18 - 20 GHz 5-Bit Phase Shifter
Advance Product Information May 3, 2000 18 - 20 GHz 5-Bit Phase Shifter TGC1439A-EPU Key Features and Performance • • • • • • 0.5um pHEMT Technology.
TriQuint Semiconductor
TGC1439A-EPU - 18 - 20 GHz 5-Bit Phase Shifter
Advance Product Information May 3, 2000 18 - 20 GHz 5-Bit Phase Shifter TGC1439A-EPU Key Features and Performance • • • • • • 0.5um pHEMT Technology.
General Semiconductor
TGL41-39 - SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
TGL41-6.8 THRU TGL41-200A SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 200 Volts Peak Pulse Power - 400 Watts FEAT.
Microsemi Corporation
TGL41-39 - 500 Watt Transient Voltage Suppressor
TGL41-6.8 thru TGL41-200CA 500 Watt Transient Voltage Suppressor SCOTTSDALE DIVISION DESCRIPTION This series of 500 W Transient Voltage Suppressors (.
General Semiconductor
TGL41-39A - SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
TGL41-6.8 THRU TGL41-200A SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 200 Volts Peak Pulse Power - 400 Watts FEAT.
Microsemi Corporation
TGL41-39A - 500 Watt Transient Voltage Suppressor
TGL41-6.8 thru TGL41-200CA 500 Watt Transient Voltage Suppressor SCOTTSDALE DIVISION DESCRIPTION This series of 500 W Transient Voltage Suppressors (.
STMicroelectronics
STGD18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
STMicroelectronics
STGP18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
TGD
MMBT3906T - PNP Transistor
Taiwan Goodark Technology Co.,Ltd MMBT3906T http://www.goodark.asia Taiwan Goodark Technology Co.,Ltd MMBT3906T http://www.goodark.asia .
