TH 102 / TH 102-Ex Rail mounted temperature trans.
ST Microelectronics
STTH102A - HIGH EFFICIENCY ULTRAFAST DIODE
® STTH102A HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 1A 200 V 175 °C 0.78 V 20 ns FEATUR.
INCHANGE
IXTH102N15T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
ST Microelectronics
STTH102 - HIGH EFFICIENCY ULTRAFAST DIODE
STTH102 High efficiency ultrafast diode Main product characteristics IF(AV) VRRM Tj (max) VF(max) trr (max) 1A 200 V 175° C 0.78 V 20 ns Features .
ABB
TH102 - temperature transmitter
TH 102 / TH 102-Ex Rail mounted temperature transmitter, HART programmable, Pt 100 (RTD), thermocouples, electrical isolation 10/11-8.54 EN I Input .
IXYS
IXTH102N15T - Power MOSFET
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.
IXYS
IXTH102N20T - Power MOSFET
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.
INCHANGE
IXTH102N20T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi.