TH102 Datasheet | Specifications & PDF Download

Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T

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Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2

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TH 102 / TH 102-Ex Rail mounted temperature transmitter, HART programmable, Pt 100 (RTD), thermocouples, electrical isolation 10/11-8.54 EN I Input

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi

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STTH102 Datasheet 200 V - 1 A high efficiency ultrafast diode K A K SMA A A K DO-41 Product status STTH102 Product summary Symbol Value IF(AV)

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® STTH102A HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 1A 200 V 175 °C 0.78 V 20 ns FEATUR

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