TH4 Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V ID MAX 11

(36 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L NTH4L013N120M3S Features • Typ. RDS(on) = 13 mW @

(34 views)

Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH440N055T2 IXTT440N055T2 V

(33 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L NTH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @

(33 views)

www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.

(30 views)

MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NTH4L027N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new h

(29 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V D ID M

(29 views)

Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching

(28 views)

Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L NTH4L028N170M1 Features • Typ. RDS(on) = 28 mW @ VGS = 20 V • Ultra Low Gate

(28 views)

(27 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO247-4L NTH4L032N065M3S Features • Typical RDS(ON) = 32 mW

(27 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L V(BR)DSS 650 V RDS(ON) TYP 23 mW @ 18 V ID MAX 6

(27 views)

SPECIFICATION SPEC. NO.： REV： 1.1 DATE： 06. 06.2014 PRODUCT NAME： AP6354 APPROVED CHECKED PREPARED DCC ISSUE NAME AMPAK Technology Inc. www.a

(26 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L NTH4L020N120SC1 Features • Typ. RDS(on) = 20 mW •

(26 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @

(26 views)

LinearL2TM Power MOSFET w/Extended FBSOA IXTT40N50L2 IXTQ40N50L2 IXTH40N50L2 VDSS = 500V ID25 = 40A  RDS(on) 170m N-Channel Enhancement Mode Aval

(25 views)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

(25 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TO-247-4L NTH4L045N065SC1 Features • Typ. RDS(on) = 33 mW @

(25 views)

MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW NTH4L040N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hig

(25 views)

Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH420N04T2 VDSS = ID25 = RD

(24 views)