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SCTH40N120G2V-7 - Silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Key Features

  • Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A.
  • Very high operating junction temperature capability (TJ = 175 °C).
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Source Kelvin pin for increased efficiency Gate (1) Driver source (2) Drain (TAB).

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SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Features Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source Kelvin pin for increased efficiency Gate (1) Driver source (2) Drain (TAB) Applications • Switching mode power supply • DC-DC converters • Industrial motor control Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.