SCTH40N120G2V-7
SCTH40N120G2V-7 is Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package
7 1 H2PAK-7
Features
Order code
RDS(on) max.
1200 V
100 mΩ
36 A
- Very high operating junction temperature capability (TJ = 175 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source Kelvin pin for increased efficiency
Gate (1) Driver source (2)
Drain (TAB)
Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and...
