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SCTH40N120G2V-7 Datasheet

Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

SCTH40N120G2V-7 datasheet preview

Datasheet Details

Part number	SCTH40N120G2V-7
Manufacturer	STMicroelectronics
File Size	364.24 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH40N120G2V-7-STMicroelectronics.pdf

SCTH40N120G2V-7 Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH40N120G2V-7 Key Features

Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source Kelvin pin for increased efficiency

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SCTH40N120G2V-7 Distributor