SCTH100N65G2-7AG Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH100N65G2-7AG Key Features
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency