SCTH35N65G2V-7 Overview
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH35N65G2V-7 Key Features
- Very fast and robust intrinsic body diode
- Low capacitance
Silicon Carbide Power MOSFET
| Part number | SCTH35N65G2V-7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 613.37 KB |
| Description | Silicon carbide Power MOSFET |
| Datasheet | SCTH35N65G2V-7-STMicroelectronics.pdf |
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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
| Part Number | Description |
|---|---|
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