SCTH35N65G2V-7 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTH35N65G2V-7 Key Features
- Very fast and robust intrinsic body diode
- Low capacitance
- Part: SCTH35N65G2V-7
- Manufacturer: STMicroelectronics
- Size: 613.37 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| SCTH35N65G2V-7AG | Automotive-grade silicon carbide Power MOSFET |
| SCTH100N120G2-AG | Automotive-grade silicon carbide Power MOSFET |
| SCTH100N65G2-7AG | Automotive-grade silicon carbide Power MOSFET |
| SCTH40N120G2V-7 | Silicon carbide Power MOSFET |
| SCTH40N120G2V7AG | Automotive-grade silicon carbide Power MOSFET |