SCTH35N65G2V-7
SCTH35N65G2V-7 is Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
7 1 H2PAK-7
Drain (TAB)
Features
Order code
650 V
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Switching mode power supply
- EV chargers
- DC-DC converters
RDS(on) typ. 55 mΩ
ID 45 A
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The...
