TIM0910-15L (Toshiba)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY S
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
MICROWAVE POWER GaAs FET
TIM0910-15L Distributor
