Toshiba
TIM0910-15L - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY S
Rating:
1
★
(3 votes)
