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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-15L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 9V IDSset= 4.0A f = 9.5 to 10.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 30.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN. 41.0 6.0 -42
TYP. MAX.
42.
TIM0910-15L Datasheet
