TIM0910-30L - MICROWAVE POWER GaAs FET

Toshiba

Key Features

ŋBROAD BAND.

TIM0910-30L microwave power gaas fet by Toshiba - Datasheet Preview

Datasheet Details

Part number	TIM0910-30L
Manufacturer	Toshiba
File Size	266.08 KB
Description	MICROWAVE POWER GaAs FET
Datasheet	TIM0910-30L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MICROWAVE POWER GaAs FET TIM0910-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc (Min.) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 7.0A f= 9.5 to 10.