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TIM0910-4 - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM0910-4
Manufacturer Toshiba
File Size 377.31 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM0910-4 Datasheet
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Full PDF Text Transcription

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.5dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-4 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 2.0A f= 9.5 to 10.5GHz UNIT dBm dB A Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN. 35.5 6.5    TYP. MAX. 36.5  7.5  1.7 2.
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