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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.5dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-4
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB G1dB IDS
VDS= 9V IDSset= 2.0A f= 9.5 to 10.5GHz
UNIT dBm dB
A
Power Added Efficiency
add
%
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN. 35.5 6.5
TYP. MAX.
36.5
7.5
1.7
2.
TIM0910-4 Datasheet
