TIM0910-30L (Toshiba)
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
TIM0910-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN
G1dB= 7.0dB
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MICROWAVE POWER GaAs FET TIM0910-30L FEATURES ŋBR.
MICROWAVE POWER GaAs FET
TIM0910-30L Distributor
