Toshiba
TIM0910-30L - MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
TIM0910-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN
G1dB= 7.0dB
Rating:
1
★
(2 votes)
