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TIM0910-30L Datasheet - Toshiba

TIM0910-30L MICROWAVE POWER GaAs FET

TIM0910-30L Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc (Min.) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERI

TIM0910-30L-Toshiba.pdf

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Datasheet Details

Part number:

TIM0910-30L

Manufacturer:

Toshiba ↗

File Size:

266.08 KB

Description:

Microwave power gaas fet.

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TIM0910-30L TIM0910-30L MICROWAVE POWER GaAs FET Toshiba

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