TIM1011-4UL - MICROWAVE POWER GaAs FET
TIM1011-4UL Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-4UL RF PERFORMANCE SPECIFICA
