TIM1011-4UL - MICROWAVE POWER GaAs FET
TIM1011-4UL Features
* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ・LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-4UL RF PERFORMANCE SPECIFICA