Part number:
TIM1011-2L
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
172.71 KB
Description:
Microwave power gaas fet.
TIM1011-2L Datasheet (172.71 KB)
* MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz
* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
* BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
* RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Powe
TIM1011-2L Datasheet (172.71 KB)
TIM1011-2L
Toshiba ↗ Semiconductor
172.71 KB
Microwave power gaas fet.
📁 Related Datasheet
TIM1011-15L MICROWAVE POWER GaAs FET (Toshiba)
TIM1011-4L MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM1011-4UL MICROWAVE POWER GaAs FET (Toshiba)
TIM1011-5L MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM1011-8L MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM1011-8UL MICROWAVE POWER GaAs FET (Toshiba)
TIM1112-15L MICROWAVE POWER GaAs FET (Toshiba)
TIM1112-4UL MICROWAVE POWER GaAs FET (Toshiba)
TIM1213-15L MICROWAVE POWER GaAs FET (Toshiba)
TIM1213-18L MICROWAVE POWER GaAs FET (Toshiba)
