TIM1011-2L MICROWAVE POWER GaAs FET

Toshiba Semiconductor

Description

www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA .

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Datasheet Specifications

Part number: TIM1011-2L
Manufacturer: Toshiba ↗ Semiconductor
File Size: 172.71 KB
Datasheet: TIM1011-2L_ToshibaSemiconductor.pdf
Description: MICROWAVE POWER GaAs FET

Features

* MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz
* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
* BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
* RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Powe

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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TIM1011-2L MICROWAVE POWER GaAs FET Toshiba Semiconductor

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