TIM1011-2L Datasheet, Fet, Toshiba Semiconductor

TIM1011-2L Features

• Fet MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz
• HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
• BROAD BAND INTERNALLY MAT

PDF File Details

Part number:

TIM1011-2L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

172.71kb

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📄 Datasheet

Description:

Microwave power gaas fet.

TIM1011-2L Application

• Applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which ma

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TIM1011-2L

Toshiba Semiconductor

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