Part number:
TIM1011-2L
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
172.71 KB
Description:
Microwave power gaas fet.
TIM1011-2L_ToshibaSemiconductor.pdf
Datasheet Details
TIM1011-2L Features
* MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz
* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
* BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
* RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Powe
TIM1011-2L_ToshibaSemiconductor.pdf
Datasheet Details
TIM1011-2L
Toshiba ↗ Semiconductor
172.71 KB
Microwave power gaas fet.
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