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TIM1011-2L Datasheet - Toshiba Semiconductor

TIM1011-2L - MICROWAVE POWER GaAs FET

TIM1011-2L Features

* MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz

* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz

* BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE

* RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Powe

TIM1011-2L_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TIM1011-2L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

172.71 KB

Description:

Microwave power gaas fet.

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