TIM1011-2L - MICROWAVE POWER GaAs FET
TIM1011-2L Features
* MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz
* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
* BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
* RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Powe
