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TIM1213-2L Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM1213-2L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-2L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

TIM1213-2L Datasheet (276.57 KB)

Preview of TIM1213-2L PDF

Datasheet Details

Part number:

TIM1213-2L

Manufacturer:

Toshiba ↗

File Size:

276.57 KB

Description:

Microwave power gaas fet.

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TIM1213-2L MICROWAVE POWER GaAs FET Toshiba

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