Datasheet Specifications
- Part number
- TIM1213-2L
- Manufacturer
- Toshiba ↗
- File Size
- 276.57 KB
- Datasheet
- TIM1213-2L-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-2L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow📁 Related Datasheet
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