Datasheet Specifications
- Part number
- TIM1414-7
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 328.89 KB
- Datasheet
- TIM1414-7_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-7 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point PowTIM1414-7 Distributors
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