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TIM1414-7

MICROWAVE POWER GaAs FET

TIM1414-7 Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN G1dB= 6.5dB at 14.0GHz to 14.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-7 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

TIM1414-7 Datasheet (328.89 KB)

Preview of TIM1414-7 PDF

Datasheet Details

Part number:

TIM1414-7

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

328.89 KB

Description:

microwave power gaas fet.

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TAGS

TIM1414-7 MICROWAVE POWER GaAs FET Toshiba Semiconductor

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