TIM1414-10LA

Microwave Power GaAs FET

Toshiba

* Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level

* High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz

* High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz

* Broadband internally matched

* Hermetically sealed package RF P

TIM1414-10LA

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Microwave power gaas fet.

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TIM1414-10LA Microwave Power GaAs FET Toshiba

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