TIM1414-10LA Microwave Power GaAs FET

Toshiba

Description

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET .

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Datasheet Specifications

Part number: TIM1414-10LA
Manufacturer: Toshiba ↗
File Size: 583.21 KB
Datasheet: TIM1414-10LA_Toshiba.pdf
Description: Microwave Power GaAs FET

Features

* Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level
* High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
* High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
* Broadband internally matched
* Hermetically sealed package RF P

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended

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TIM1414-10LA Microwave Power GaAs FET Toshiba

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