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TIM1414-15L Microwave Power GaAs FET

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Description

MICROWAVE POWER GaAs FET TIM1414-15L .

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Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 14.0GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42dBc(Min. ) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERI

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Microwave Power GaAs FET Toshiba
Toshiba TIM1414-15L-like datasheet