Datasheet Specifications
- Part number
- TIM1414-18L
- Manufacturer
- Toshiba ↗
- File Size
- 339.56 KB
- Datasheet
- TIM1414-18L_Toshiba.pdf
- Description
- Microwave Power GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3(Min. )= -25dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-18L RF PERFORMANCE STIM1414-18L Distributors
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