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TIM1414-18L Microwave Power GaAs FET

TIM1414-18L Description

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TIM1414-18L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3(Min. )= -25dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-18L RF PERFORMANCE S

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Microwave Power GaAs FET Toshiba
Toshiba TIM1414-18L-like datasheet