TIM1414-10LA-252 Datasheet (Toshiba) - Microwave Power GaAs FET

TIM1414-10LA-252, Microwave Power GaAs FET

www.DataSheet4U.com TOSHIBA Oct.

1999 TIM1414-10LA-252 1.

RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.75-14.5GHz 4.5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 dB A % dBc °C ( Ta= Ta= 25°C ) MIN.

TYP.

MAX.

UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch DataSheet4