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TIM1011-4L Datasheet - Toshiba Semiconductor

TIM1011-4L - MICROWAVE POWER GaAs FET

TIM1011-4L Features

* HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz

* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz

* BROAD BAND INTERNALLY MATCHED FET

* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB G

TIM1011-4L_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TIM1011-4L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

181.74 KB

Description:

Microwave power gaas fet.

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