TIM1011-4L Datasheet, Fet, Toshiba Semiconductor

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TIM1011-4L

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Toshiba ↗ Semiconductor

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📄 Datasheet

Description:

Microwave power gaas fet.

📁 Related Datasheet

TIM1011-4UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.

TIM1011-15L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.

TIM1011-2L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
.. TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz.

TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY.

TIM1011-8L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
.. MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dB.

TIM1011-8UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.

TIM1112-15L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 6.0dB at 11.7GHz to 12.7GHz ･LOW INTERMOD.

TIM1112-4UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 9.5dB at 11.7GHz to 12.7GHz ･LOW INTERMOD.

TIM1213-15L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD.

TIM1213-18L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD.

TAGS

TIM1011-4L MICROWAVE POWER GaAs FET Toshiba Semiconductor