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TIM1011-4L - MICROWAVE POWER GaAs FET

Toshiba Semiconductor

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Datasheet Details

Part number	TIM1011-4L
Manufacturer	Toshiba ↗ Semiconductor
File Size	181.74 KB
Description	MICROWAVE POWER GaAs FET
Datasheet	TIM1011-4L_ToshibaSemiconductor.pdf

TIM1011-4L Product details

Features

HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz.
HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz.
BROAD BAND.

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Published: Sep 6, 2007 |