TIM1011-4L - MICROWAVE POWER GaAs FET
TIM1011-4L Features
* HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz
* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB G
