TIM1011-4L

MICROWAVE POWER GaAs FET

Toshiba Semiconductor

* HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz

* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz

* BROAD BAND INTERNALLY MATCHED FET

* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB G

TIM1011-4L

Toshiba ↗ Semiconductor

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Microwave power gaas fet.

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TIM1011-4L MICROWAVE POWER GaAs FET Toshiba Semiconductor

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