Datasheet Specifications
- Part number
- TIM1112-4UL
- Manufacturer
- Toshiba ↗
- File Size
- 276.77 KB
- Datasheet
- TIM1112-4UL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 9.5dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1112-4UL RF PERFORMANCE SPECIFICATIM1112-4UL Distributors
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